Insulated Gate Bipolar Transistor Igbt

Insulated gate bipolar transistor igbt june 8 2019 february 24 2012 by electrical4u igbt is a relatively new device in power electronics and before the advent of igbt power mosfets and power bjt were common in use in power electronic applications.

Insulated gate bipolar transistor igbt.

The igbt combines the insulated gate technology of the mosfet with the output performance characteristics of a conventional bipolar transistor. Igbt insulated gate bipolar transistor igbt is designed by combining the features of both mosfet and bjt in monolithic form. The insulated gate bipolar transistor igbt is a minority carrier device with high input impedance and large bipolar current carrying capability. Select an igbt download a datasheet run a simulation or find where to buy your igbt online today.

It is a three terminal semiconductor switching device that can be used for fast switching with high efficiency in many types of electronic devices. Igbts are capable of switching on and off several thousand times a second. The igbt transistor takes the best parts of these two types of common transistors the high input impedance and high switching speeds of a mosfet with. A vfd igbt can turn on in less than 400 nanoseconds and off in approximately 500 nanoseconds.

We help oem s contract manufacturers engineers and the defense industry all over the world with their requirements of new parts and also those obsolete or hard to find surplus components. Igbt insulated gate bipolar transistor provides a high switching speed necessary for pwm vfd operation. A vfd igbt consists of a gate collector and an emitter. The insulated gate bipolar transistor igbt which was introduced in early 1980s is becoming a successful device because of its superior characteristics.

It is a minority charge carrier device and has high input impedance. Igbt is the short form of insulated gate bipolar transistor. Offering unsurpassed efficiency and reliability igbts from infineon are ideal for your high power inverters and converters. The insulated gate bipolar transistor also called an igbt for short is something of a cross between a conventional bipolar junction transistor bjt and a field effect transistor mosfet making it ideal as a semiconductor switching device.

Igbt is subdivided in discrete modules stacks bare dies. As the bjts have high current handling capacity and mosfet control is easy igbts are preferred for medium to high power applications. Many new applications would not be economically feasible without igbts. It consists of four alternating layers p n p n that are controlled by a metal oxide semiconductor mos gate structure without regenerative clarification needed action.